Makaleler
14
Tümü (14)
SCI-E, SSCI, AHCI (9)
SCI-E, SSCI, AHCI, ESCI (11)
Scopus (11)
Diğer Yayınlar (3)
3. Effect of Si and Ge doping on electronic structure of InP nanowire
Journal of Optoelectronics and Advanced Materials
, cilt.25, sa.11-12, ss.572-579, 2023 (SCI-Expanded, Scopus)
7. Electronic Properties of Cr and Mn Doped BN Nanowires
MATERIALS SCIENCE FORUM
, 2018 (Hakemli Dergi)
8. Elektronic bant structure of Te-doped GAN nanowires
Materials Today: Proceedings
, 2017 (Hakemli Dergi)
12. Electronic and structural properties of large latticemismatched Si/BP superlattice
Journal of Optoelectronics and Advanced Materials
, cilt.13, sa.11-12, ss.1502-1506, 2011 (SCI-Expanded, Scopus)
13. Electric field and concentration effects on the binding energy of a non - Hydrogenic donor impurity in a finite cylindrical quantum well wire
Journal of Optoelectronics and Advanced Materials
, cilt.11, sa.12, ss.2120-2125, 2009 (SCI-Expanded, Scopus)
14. Electric field effect on the binding energy of A non-hydrogenic donor impurity in a square quantum well wire
Journal of Optoelectronics and Advanced Materials
, cilt.7, sa.4, ss.2041-2046, 2005 (SCI-Expanded, Scopus)
Hakemli Bilimsel Toplantılarda Yayımlanmış Bildiriler
12
2. Contribution of Awareness to Aviation Sector and Teamwork of ”I am Making My Own Drone Project” Made by High School and University Students
Uluslararası Öğrenme, Öğretim ve Eğitim Araştırmaları (International Learning, Teaching and Educational Research Congress - ILTER) Kongresi, Amasya, Türkiye, 6 - 08 Eylül 2018, (Tam Metin Bildiri)
3. The Electrostatic Potentials of GaN/AlN Heterostructures: Bulk and Nanowire
5th International Congress on Fundamental and Applied Sciences 2018, 18 - 22 Haziran 2018, (Özet Bildiri)
4. Electronic Properties of Transition Metal Doped Semiconductor Nanowires
5th International Congress on Fundamental and Applied Sciences 2018, 18 - 22 Haziran 2018, (Özet Bildiri)
6. A comparison Study on Potentai Structures of InAs/GaAs Nanowire and Bulk Heterostructure
2017 6th International Conference on Nanostructures, Nanomaterials and Nanoengineering (ICNNN 2017), Tokyo, Japonya, 26 - 29 Ekim 2017, (Özet Bildiri)
7. A Comparison Study on Potential Structures of InAs/GaAs Nanowire and Bulk Heterostructues
6th International Conference on Nanostructures, Nanomaterials and Nanoengineering, ICNNN 2017, 26 - 29 Ekim 2017, (Özet Bildiri)
8. A Comparison Study on Potential Structures of InAs/GaAs Nanowire and Bulk Heterostructures
6th International Conference on Nanostructures, Nanomaterials and Nanoengineering, 26 - 29 Ekim 2017, (Özet Bildiri)
9. First principles study on the electronic properties of BN nanowires
7th International Conference on Advanced Nanomaterials, Aveiro, Portekiz, 25 - 27 Temmuz 2016, (Özet Bildiri)
10. First principle study on the electronic properties of BN nanowires
7th International Conference on Advanced Nanomaterials, 25 - 27 Temmuz 2016, (Özet Bildiri)
11. Elektronic bant structure of Te-doped GAN nanowires
ANM2016, Aveiro, Portekiz, 25 - 27 Temmuz 2016, ss.121, (Özet Bildiri)
12. Electronic band structures of Te-doped GaN nanowires
7th International Conference on Advanced Nanomaterials, 25 - 27 Temmuz 2016, (Özet Bildiri)