Electronic band structures of Te-doped GaN nanowires

ÖZKİŞİ H., ÖZKAPI B., Özkapi S. G., DALGIÇ S.

Materials Today: Proceedings, cilt.4, sa.11, ss.11640-11643, 2017 (Scopus) identifier identifier

  • Yayın Türü: Makale / Özet
  • Cilt numarası: 4 Sayı: 11
  • Basım Tarihi: 2017
  • Doi Numarası: 10.1016/j.matpr.2017.09.076
  • Dergi Adı: Materials Today: Proceedings
  • Derginin Tarandığı İndeksler: Scopus
  • Sayfa Sayıları: ss.11640-11643
  • Anahtar Kelimeler: Doping, Electronic properties, First principles method, GaN nanowires
  • Trakya Üniversitesi Adresli: Evet

Özet

In this study, we investigate electronic band structures of Te-doped GaN nanowires with three different radii using the first principles methods, which is based on the density functional theory. The relaxed structures, total energies and electronic band structures of pure and Te-doped GaN nanowires are calculated. The results show that the energy band gap values reduce when GaN nanowires are doped with a Te atom. While the band gap values of pure GaN nanowires increase with increasing nanowire radius, they present a decrease for Te-doped GaN nanowires.