Journal of Optoelectronics and Advanced Materials, cilt.11, sa.12, ss.2120-2125, 2009 (SCI-Expanded, Scopus)
The effects of the electric field and concentration on the non-hydrogenic binding energy of a shallow donor impurity in a finite cylindrical quantum well wire (CQWW) of GaAs/ AlxGa1-xAs was investigated. Within the effective mass approximation, we have calculated the non-hydrogenic binding energy of donor impurity by a variational method as a function of applied electric field, the wire radius, donor impurity positions and concentration of Al. We have investigated the concentration effect of Al on the non-hydrogenic binding energy as a function of electric field, wire radius and impurity position in QWW. It is shown that the difference in donor binding energy in the hydrogenic and non-hydrogenic regimes varies with radius of QWWs and impurity position while the interplay of the electric field is the same.