Electronic properties of Cr and Mn doped BN nanowires

Özkapı S. G., ÖZKAPI B., DALGIÇ S.

6th International Conference on Nanostructures, Nanomaterials and Nanoengineering, ICNNN 2017 and 2nd International Conference on Materials Technology and Applications, ICMTA 2017, Tokyo, Japonya, 26 - 29 Ekim 2017, cilt.916 MSF, ss.69-73, (Tam Metin Bildiri) identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 916 MSF
  • Doi Numarası: 10.4028/www.scientific.net/msf.916.69
  • Basıldığı Şehir: Tokyo
  • Basıldığı Ülke: Japonya
  • Sayfa Sayıları: ss.69-73
  • Anahtar Kelimeler: BN nanowires, Electronic structure, First principles method, TM doped nanowires
  • Trakya Üniversitesi Adresli: Evet

Özet

In this work, we have investigated electronic structures of pure and doped (with Cr and Mn atoms, separately) BN nanowires along [001] direction with zinc blende phase by means of density functional theory calculations. Our results show that the substitution doping of nanowires by Cr and Mn atoms decrases the band gaps of the all BN nanowires. Also, spin polarized calculations exhibit that the density of states (DOS) for spin up and spin down electrons are antisymmetric structure for both Cr and Mn doped BN nanowires. All these show that doped BN nanowire systems have potential applications in electronics and spintronics.