Electronic properties of Cr and Mn doped BN nanowires
6th International Conference on Nanostructures, Nanomaterials and Nanoengineering, ICNNN 2017 and 2nd International Conference on Materials Technology and Applications, ICMTA 2017, Tokyo, Japan, 26 - 29 October 2017, vol.916 MSF, pp.69-73, (Full Text)
- Publication Type: Conference Paper / Full Text
- Volume: 916 MSF
- Doi Number: 10.4028/www.scientific.net/msf.916.69
- City: Tokyo
- Country: Japan
- Page Numbers: pp.69-73
- Keywords: BN nanowires, Electronic structure, First principles method, TM doped nanowires
- Trakya University Affiliated: Yes
Abstract
In this work, we have investigated electronic structures of pure and doped (with Cr and Mn atoms, separately) BN nanowires along [001] direction with zinc blende phase by means of density functional theory calculations. Our results show that the substitution doping of nanowires by Cr and Mn atoms decrases the band gaps of the all BN nanowires. Also, spin polarized calculations exhibit that the density of states (DOS) for spin up and spin down electrons are antisymmetric structure for both Cr and Mn doped BN nanowires. All these show that doped BN nanowire systems have potential applications in electronics and spintronics.