Enhanced boost converter with gan based power switches and switched-capacitor
Communications Faculty of Sciences University of Ankara Series A2-A3: Physical Sciences and Engineering, cilt.63, sa.1, ss.1-16, 2021 (TRDizin)
- Yayın Türü: Makale / Tam Makale
- Cilt numarası: 63 Sayı: 1
- Basım Tarihi: 2021
- Doi Numarası: 10.33769/aupse.757924
- Dergi Adı: Communications Faculty of Sciences University of Ankara Series A2-A3: Physical Sciences and Engineering
- Derginin Tarandığı İndeksler: TR DİZİN (ULAKBİM)
- Sayfa Sayıları: ss.1-16
- Açık Arşiv Koleksiyonu: AVESİS Açık Erişim Koleksiyonu
- Trakya Üniversitesi Adresli: Evet
Özet
To increase the voltage gain of power electronic circuits, severalvoltage converters have been designed by researchers. Especially, the boost basedconverters are used by designers for numerous devices and systems because of theirreliability. Generally, in these studies, researchers propose to use high frequencytransformers, silicon based diodes and inductance based sub-circuits. However, theimprovement on new generation power transistors should be considered as analternative way to provide these goals because of their lower inner resistances,lower switching losses and adoptability for new generation devices. Therefore, inthis paper, usage of these kinds of semiconductors to improve the voltage gainperformance of traditional boost converter is proposed. With this enhanced designand usage of new semiconductor switches, we obtain approximately 70% moreoutput voltage gain than traditional boost converter. The proposed converterprovides significant gain, high scalability in duty cycle vs output voltage usage andportability for weight restricted systems. The enhanced boost based converter ismodelled in Simulink to verify the analytical voltage gain equations. Finally, theproposed model is compared with traditional boost converter in term of gainperformance.