Screening effect on the binding energies of shallow donors, acceptors and excitons in finite-barrier quantum wells

Akbaş H., AKTAŞ Ş., OKAN Ş. E., ULAŞ M., TOMAK M.

Superlattices and Microstructures, cilt.23, sa.1, ss.113-119, 1998 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 23 Sayı: 1
  • Basım Tarihi: 1998
  • Doi Numarası: 10.1006/spmi.1996.9993
  • Dergi Adı: Superlattices and Microstructures
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.113-119
  • Anahtar Kelimeler: Acceptor, Donor, Exciton, GaAs/Ga1-xAlxAs, Screening
  • Trakya Üniversitesi Adresli: Evet

Özet

The conduction and valence subband energies in the presence of an electric field are calculated using the fifth-order Runge-Kutta method. The binding energies of shallow donors, acceptors and excitons in finite-barrier GaAs/Ga1 - xAlxAs quantum wells are then obtained variationally in the presence of a magnetic field. The effects of a spatially dependent screening function ε(r) on the calculation of binding energies are specifically investigated. The use of ε(r) in comparison with the use of a constant ε0 increases the binding energy of acceptors as the increase on shallow donors and excitons is quite small. © 1998 Academic Press Limited.