An interface study of c-BP/c-GaN heterostructure

ÖZKİŞİ H., Kiragasi A., DALGIÇ S.

Journal of Optoelectronics and Advanced Materials, vol.13, no.11-12, pp.1507-1509, 2011 (SCI-Expanded, Scopus) identifier identifier

  • Publication Type: Article / Article
  • Volume: 13 Issue: 11-12
  • Publication Date: 2011
  • Journal Name: Journal of Optoelectronics and Advanced Materials
  • Journal Indexes: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Page Numbers: pp.1507-1509
  • Keywords: Band structure, Bulk heterostructure, Interface, Macroscopic average
  • Trakya University Affiliated: Yes

Abstract

We present the modeled a superlattice for cubic-GaN on BP structure at (001) direction. The modeling procedure was achieved by using first principle calculations based on the density functional theory with Plane Wave Self Consistent Field. We also report the total energy of ground state, lattice constant, electronic band structure and potential energy line up of heterojunction between c-BP/c-GaN compounds. The effects of interface have been investigated in this system.