An interface study of c-BP/c-GaN heterostructure

ÖZKİŞİ H., Kiragasi A., DALGIÇ S.

Journal of Optoelectronics and Advanced Materials, cilt.13, sa.11-12, ss.1507-1509, 2011 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 13 Sayı: 11-12
  • Basım Tarihi: 2011
  • Dergi Adı: Journal of Optoelectronics and Advanced Materials
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.1507-1509
  • Anahtar Kelimeler: Band structure, Bulk heterostructure, Interface, Macroscopic average
  • Trakya Üniversitesi Adresli: Evet

Özet

We present the modeled a superlattice for cubic-GaN on BP structure at (001) direction. The modeling procedure was achieved by using first principle calculations based on the density functional theory with Plane Wave Self Consistent Field. We also report the total energy of ground state, lattice constant, electronic band structure and potential energy line up of heterojunction between c-BP/c-GaN compounds. The effects of interface have been investigated in this system.