Binding energy of 2p-bound state of a hydrogenic donor impurity in a GaAs/Ga1-xAlxAs spherical quantum dot under hydrostatic pressure

Bulut P., ERDOĞAN İ., Akbas H.

Physica E: Low-Dimensional Systems and Nanostructures, cilt.63, ss.299-303, 2014 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 63
  • Basım Tarihi: 2014
  • Doi Numarası: 10.1016/j.physe.2014.06.020
  • Dergi Adı: Physica E: Low-Dimensional Systems and Nanostructures
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.299-303
  • Anahtar Kelimeler: Binding energy, Donor impurity, Spherical dot, Turning point
  • Trakya Üniversitesi Adresli: Evet

Özet

By using a variational procedure within the effective mass approximation, we calculated the 2p-state binding energy, E2pba(x,P), and the binding energy turning point, R2pEbT(x,P) of a hydrogenic donor impurity located at the centre of the GaAs/Ga1-xAlxAs spherical quantum dot under the influence of hydrostatic pressure. The results obtained show that the binding energy turning point, R2pEbT(x,P) is an important factor in dealing with the 2p-bound state of a hydrogenic donor impurity embedded at the centre of the quantum dot. © 2014 Elsevier B.V. All rights reserved.