Laser field effect on self-polarization of a donor impurity in a finite Ga1−xAlxAs/GaAs quantum well

ERDOĞAN İ., YAVUZ S.

Physica B: Condensed Matter, cilt.609, 2021 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 609
  • Basım Tarihi: 2021
  • Doi Numarası: 10.1016/j.physb.2020.412728
  • Dergi Adı: Physica B: Condensed Matter
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Academic Search Premier, PASCAL, Aerospace Database, Chemical Abstracts Core, Communication Abstracts, INSPEC, Metadex, Civil Engineering Abstracts
  • Anahtar Kelimeler: Binding energy, Donor impurity, Laser field, Quantum well, Self-polarization, Variational methods
  • Trakya Üniversitesi Adresli: Evet

Özet

The self-polarization and donor binding energy are calculated for a square Ga1−xAlxAs/GaAs quantum well under an laser field. The donor binding energy and self-polarization are obtained as a function of the laser field parameter, donor impurity position and quantum well-width. The calculations are made by means of variational and finite differences methods using the effective-mass approximation. Our results show that the laser field has remarkable effect on the self-polarization and donor binding energy. These results can be useful for studies on the electronic and optical properties of a quantum well under the influence of a laser field.