The binding energy of hydrogenic impurity in multilayered spherical quantum dot

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AKTAŞ Ş., Boz F. K.

Physica E: Low-Dimensional Systems and Nanostructures, cilt.40, sa.4, ss.753-758, 2008 (SCI-Expanded, Scopus)

• Yayın Türü: Makale / Tam Makale
• Cilt numarası: 40 Sayı: 4
• Basım Tarihi: 2008
• Doi Numarası: 10.1016/j.physe.2007.09.192
• Dergi Adı: Physica E: Low-Dimensional Systems and Nanostructures
• Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
• Sayfa Sayıları: ss.753-758
• Anahtar Kelimeler: Binding energy, Quantum dot
• Trakya Üniversitesi Adresli: Evet

Özet

The binding energy of a hydrogenic impurity of a multilayered spherical GaAs-(Ga,Al)As quantum dot has been investigated as a function of the barrier thickness and the inner dot thickness for various barrier potentials in the effect of the band non-parabolicity. Within the effective mass approximation, the ground state energy has been calculated using the fourth-order Runge-Kutta method. The ground state binding energy of hydrogenic impurity located at the center of a quantum dot has been studied with a variational approach. We have found that a variation in the binding energy has depended on the geometry of the dot. © 2007 Elsevier B.V. All rights reserved.