Post-Annealing effects on the structural and optical properties of nanostructured germanium thin film

Altuntepe A., Zan R., ERDOĞAN İ., Dogan Y.

Materials Letters, cilt.383, 2025 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 383
  • Basım Tarihi: 2025
  • Doi Numarası: 10.1016/j.matlet.2025.138006
  • Dergi Adı: Materials Letters
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus, Chemical Abstracts Core, Chimica, Compendex, INSPEC
  • Anahtar Kelimeler: e-beam deposition, Ge, Ion-assisted
  • Trakya Üniversitesi Adresli: Evet

Özet

This study examines the effects of post-annealing on the structural, optical properties of nanostructured Ge thin films deposited by e-beam evaporation. Ge, known for its high refractive index and superior carrier mobility compared to Si, is promising for advanced semiconductor and mid-infrared optical applications. The films were annealed at 650 °C, 750 °C, and 850 °C, and characterized using XRD, Raman spectroscopy, and white light interferometry to evaluate their crystallinity, band gap, and surface roughness. The optimal annealing temperature was found to be 650 °C, which enhanced crystallinity and maintained smooth surfaces while minimizing oxidation. Higher temperatures induced significant quantum confinement effects and band gap shifts but also increased oxidation. These findings highlight the suitability of post-annealed Ge films for optoelectronics and photonics, especially in the mid-infrared region.