Density functional calculation for BP/GaN heterostructures

ÖZKİŞİ H., DALGIÇ S.

6th International Conference on Nanostructures, Nanomaterials and Nanoengineering, ICNNN 2017 and 2nd International Conference on Materials Technology and Applications, ICMTA 2017, Tokyo, Japonya, 26 - 29 Ekim 2017, cilt.916 MSF, ss.45-49, (Tam Metin Bildiri) identifier

  • Yayın Türü: Bildiri / Tam Metin Bildiri
  • Cilt numarası: 916 MSF
  • Doi Numarası: 10.4028/www.scientific.net/msf.916.45
  • Basıldığı Şehir: Tokyo
  • Basıldığı Ülke: Japonya
  • Sayfa Sayıları: ss.45-49
  • Anahtar Kelimeler: BP/GaN nanowires, Density functional theory, Doping
  • Trakya Üniversitesi Adresli: Evet

Özet

Recently, it has become indispensable to use semiconducting nanostructures in the production and development of electronic devices. In this study, the bulk and nanowire heterostructures of the BP / GaN system have been investigated for the structures pure and Te atom doped. In calculations, the plane wave self consistent field program based on density functional theory was used. The average potentials of the aforementioned systems have been calculated and the interface effect has investigated.