Energy levels of GaAs/Al x Ga 1-x As/AlAs spherical quantum dot with an impurity

Boz F. K., Nisanci B., AKTAŞ Ş., OKAN Ş. E.

Applied Surface Science, cilt.387, ss.76-81, 2016 (SCI-Expanded, Scopus) identifier identifier

  • Yayın Türü: Makale / Tam Makale
  • Cilt numarası: 387
  • Basım Tarihi: 2016
  • Doi Numarası: 10.1016/j.apsusc.2016.06.035
  • Dergi Adı: Applied Surface Science
  • Derginin Tarandığı İndeksler: Science Citation Index Expanded (SCI-EXPANDED), Scopus
  • Sayfa Sayıları: ss.76-81
  • Anahtar Kelimeler: Energy level, Quantum dot, Runge–Kutta
  • Trakya Üniversitesi Adresli: Evet

Özet

We have calculated the energy levels and the radial probability distributions of an electron with an impurity in a spherical quantum dot which is layered as GaAs/Al x Ga 1-x As/AlAs. The numerical method used is the fourth-order Runge–Kutta method in the framework of the effective mass approximation. The variation of the energy levels have been calculated as functions of the radius of the GaAs sphere and the thickness of Al x Ga 1-x As spherical layer considering effective mass and dielectric constant mismatches. The results have presented the importance of the geometry on the electronic properties of the spherical GaAs/Al x Ga 1-x As/AlAs quantum dot.